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preliminary: the specification of this device are subject to change without notice. please contact your nearest hitachi? sales dept. regarding specification. HN58X24512I two-wire serial interface 512k eeprom (64-kword 8-bit) ade-203-1239 (z) preliminary rev. 0.0 jan. 10, 2001 description HN58X24512I is the two-wire serial interface eeprom (electrically erasable and programmable rom). it realizes high speed, low power consumption and a high level of reliability by employing advanced mnos memory technology and cmos process and low voltage circuitry technology. it also has a 128- byte page programming function to make it? write operation faster. note: hitachi? serial eeprom are authorized for using consumer applications such as cellular phone, camcorders, audio equipment. therefore, please contact hitachi? sales office before using industrial applications such as automotive systems, embedded controllers, and meters. features single supply: 1.8 v to 5.5 v two-wire serial interface (i 2 c tm serial bus* 1 ) clock frequency: 1 mhz (2.5 v to 5.5 v)/400 khz (1.8 v to 2.5 v) power dissipation: ? standby: 3 ? (max) ? active (read): 2 ma (max) ? active (write): 5 ma (max) automatic page write: 128-byte/page write cycle time: 10 ms (2.5 v to 5.5 v)/15 ms (1.8 v to 2.5 v) endurance: 10 5 cycles (page write mode) data retention: 10 years
HN58X24512I 2 small size packages: sop-8pin (200 mil-wide) shipping tape and reel: 2,500 ic/reel temperature range: ?0 to +85 c note: 1. i 2 c is a trademark of philips corporation. ordering information type no. internal organization operating voltage frequency package hn58x24512fpi 512k bit (65536 8-bit) 2.5 v to 5.5 v 1 mhz 200 mil 8-pin plastic sop 1.8 v to 2.5 v 400 khz pin arrangement 1 2 3 4 8 7 6 5 a0 a1 nc v ss v cc wp scl sda (top view) 8-pin sop pin description pin name function a0, a1 device address scl serial clock input sda serial data input/output wp write protect v cc power supply v ss ground nc no connection
HN58X24512I 3 block diagram control logic high voltage generator address generator x decoder y decoder memory array y-select & sense amp. serial-parallel converter v cc v ss wp a0, a1 scl sda absolute maximum ratings parameter symbol value unit supply voltage relative to v ss v cc ?.6 to +7.0 v input voltage relative to v ss vin ?.5* 2 to +7.0* 3 v operating temperature range* 1 topr ?0 to +85 ?c storage temperature range tstg ?5 to +125 ?c notes: 1. including electrical characteristics and data retention. 2. vin (min): ?.0 v for pulse width 50 ns. 3. should not exceed v cc + 1.0 v. dc operating conditions parameter symbol min typ max unit supply voltage v cc 1.8 5.5 v v ss 000v input high voltage v ih v cc 0.7 v cc + 0.5* 2 v input low voltage v il ?.3* 1 ? cc 0.3 v operating temperature topr ?0 85 ?c notes: 1. v il (min): ?.0 v for pulse width 50 ns. 2. v ih (max): v cc + 1.0 v for pulse width 50 ns.
HN58X24512I 4 dc characteristics (ta = ?0 to +85?c, v cc = 1.8 v to 5.5 v) parameter symbol min typ max unit test conditions input leakage current i li 2.0 ? v cc = 5.5 v, vin = 0 to 5.5 v (scl, sda) 20av cc = 5.5 v, vin = 0 to 5.5 v (a0, a1, wp) output leakage current i lo 2.0 ? v cc = 5.5 v, vout = 0 to 5.5 v standby v cc current i sb 1.0 3.0 ? vin = v ss or v cc read v cc current i cc1 2.0 ma v cc = 5.5 v, read at 400 khz write v cc current i cc2 5.0 ma v cc = 5.5 v, write at 400 khz output low voltage v ol2 0.4 v v cc = 4.5 to 5.5 v, i ol = 1.6 ma v cc = 2.5 to 4.5 v, i ol = 0.8 ma v cc = 1.8 to 2.5 v, i ol = 0.4 ma v ol1 0.2 v v cc = 1.8 to 2.5 v, i ol = 0.2 ma capacitance (ta = 25?c, f = 1 mhz) parameter symbol min typ max unit test conditions input capacitance (a0 to a1, scl, wp) cin* 1 6.0 pf vin = 0 v output capacitance (sda) c i/o * 1 6.0 pf vout = 0 v note: 1. this parameter is sampled and not 100% tested.
HN58X24512I 5 ac characteristics (ta = ?0 to +85?c, v cc = 1.8 to 5.5 v) test conditions input pules levels: ? v il = 0.2 v cc ? v ih = 0.8 v cc input rise and fall time: 20 ns input and output timing reference levels: 0.5 v cc output load: ttl gate + 100 pf v cc = 1.8 to 5.5 v v cc = 2.5 to 5.5 v parameter symbol min max min max unit notes clock frequency f scl 400 1000 khz clock pulse width low t low 1200 600 ns clock pulse width high t high 600 400 ns noise suppression time t i 50 50 ns 1 access time t aa 100 900 100 550 ns bus free time for next mode t buf 1200 500 ns start hold time t hd.sta 600 250 ns start setup time t su.sta 600 250 ns data in hold time t hd.dat 00ns data in setup time t su.dat 100 100 ns input rise time t r 300 300 ns 1 input fall time t f 300 100 ns 1 stop setup time t su.sto 600 250 ns data out hold time t dh 50 50 ns write cycle time t wc 15 10 ms 2 notes: 1. this parameter is sampled and not 100% tested. 2. t wc is the time from a stop condition to the end of internally controlled write cycle.
HN58X24512I 6 timing waveforms bus timing t f 1/f scl t high t su.sta t hd.sta t hd.dat t su.dat t su.sto t buf t dh t aa t low t r scl sda (in) sda (out) write cycle timing scl sda d0 in write data ack (address (n)) t wc (internally controlled) stop condition start condition
HN58X24512I 7 pin function serial clock (scl) the scl pin is used to control serial input/output data timing. the scl input is used to positive edge clock data into eeprom device and negative edge clock data out of each device. maximum clock rate is 1 mhz. serial input/output data (sda) the sda pin is bidirectional for serial data transfer. the sda pin needs to be pulled up by resistor as that pin is open-drain driven structure. use proper resistor value for your system by considering v ol , i ol and the sda pin capacitance. except for a start condition and a stop condition, which will be discussed later, the sda transition needs to be completed during scl low period. data validity (sda data change timing waveform) scl sda data change data change note: high-to-low and low-to-high change of sda should be done during scl low periods.
HN58X24512I 8 device address (a0, a1) up to four devices can be addressed on the same bus by setting the levels on these pins to different combinations. the levels on these pins are compared with the device address code which are inputted thought the sda pin. these device is selected if the compare is successfully done. these pins are internally pulled down to v ss . the device read these pins as low if unconnected. pin connections for a0, a1 pin connection memory size max connect number a1 a0 note 512k bit 4 v cc /v ss * 1 v cc /v ss note: 1. ? cc /v ss ?means that device address pin should be connected to v cc or v ss . the a1 and a0 are read as v ss , if left unconnected. write protect (wp) when the write protect pin (wp) is high, the write protection feature is enabled and operates as shown in the following table. when the wp is low, write operation for all memory arrays are allowed. the read operation is always activated irrespective of the wp pin status. when left unconnected, the wp input is read as v il because the wp pin is internally pulled down to v ss . write protect area wp pin status write protect area v ih full (512k bit) v il normal read/write operation
HN58X24512I 9 functional description start condition a high-to-low transition of the sda with the scl high is needed in order to start read, write operation. (see start condition and stop condition) stop condition a low-to-high transition of the sda with the scl high is a stop condition. the stand-by operation starts after a read sequence by a stop condition. in the case of write operation, a stop condition terminates the write data inputs and place the device in a internally-timed write cycle to the memories. after the internally-timed write cycle which is specified as t wc , the device enters a standby mode. (see write cycle timing) start condition and stop condition scl sda (in) stop condition start condition
HN58X24512I 10 acknowledge all addresses and data words are serially transmitted to and from in 8-bit words. the receiver sends a zero to acknowledge that it has received each word. this happens during ninth clock cycle. the transmitter keeps bus open to receive acknowledgment from the receiver at the ninth clock. in the write operation, eeprom sends a zero to acknowledge after receiving every 8-bit words. in the read operation, eeprom sends a zero to acknowledge after receiving the device address word. after sending read data, the eeprom waits acknowledgment by keeping bus open. if the eeprom receives zero as an acknowledge, it sends read data of next address. if the eeprom receives acknowledgment "1" (no acknowledgment) and a following stop condition, it stops the read operation and enters a stand-by mode. if the eeprom receives neither acknowledgment "0" nor a stop condition, the eeprom keeps bus open without sending read data. acknowledge timing waveform scl sda in sda out 12 8 9 acknowledge out
HN58X24512I 11 device addressing the eeprom device requires an 8-bit device address word following a start condition to enable the chip for a read or a write operation. the device address word consists of 4-bit device code, 3-bit device address code and 1-bit read/write(r/w) code. the most significant 4-bit of the device address word are used to distinguish device type and this eeprom uses ?010?fixed code. the device address word is followed by the 3-bit device address code. the upper bit of device address can be set any data. the device address code selects one device out of all devices which are connected to the bus. this means that the device is selected if the inputted 3-bit device address code is equal to the corresponding hard-wired a1 to a0 pin status. the eighth bit of the device address word is the read/write(r/w) bit. a write operation is initiated if this bit is low and a read operation is initiated if this bit is high. upon a compare of the device address word, the eeprom enters the read or write operation after outputting the zero as an acknowledge. the eeprom turns to a stand-by state if the device code is not ?010?or device address code doesn? coincide with status of the correspond hard-wired device address pins a0 to a1. device address word device address word (8-bit) device code (fixed) device address code r/w code* 1 128k, 256k 10100* 2 a1 a0 r/w notes: 1. r/w=??is read and r/w = ??is write. 2. don? care bit.
HN58X24512I 12 write operations byte write: a write operation requires an 8-bit device address word with r/w = ?? then the eeprom sends acknowledgment "0" at the ninth clock cycle. after these, the eeprom receives 2 sequence 8-bit memory address words. upon receipt of this memory address, the eeprom outputs acknowledgment "0" and receives a following 8-bit write data. after receipt of write data, the eeprom outputs acknowledgment "0". if the eeprom receives a stop condition, the eeprom enters an internally-timed write cycle and terminates receipt of scl, sda inputs until completion of the write cycle. the eeprom returns to a standby mode after completion of the write cycle. byte write operation device address 1st memory address (n) 2nd memory address (n) write data (n) 10100 w a12 a11 a14 a15 a13 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d7 d6 d5 d4 d3 d2 d1 d0 stop start note: 1. don't care bit. ack ack ack r/w * 1
HN58X24512I 13 page write: the eeprom is capable of the page write operation which allows any number of bytes up to 128 bytes to be written in a single write cycle. the page write is the same sequence as the byte write except for inputting the more write data. the page write is initiated by a start condition, device address word, memory address(n) and write data (dn) with every ninth bit acknowledgment. the eeprom enters the page write operation if the eeprom receives more write data (dn+1) instead of receiving a stop condition. the a0 to a6 address bits are automatically incremented upon receiving write data (dn+1). the eeprom can continue to receive write data up to 128 bytes. if the a0 to a6 address bits reaches the last address of the page, the a0 to a6 address bits will roll over to the first address of the same page and previous write data will be overwritten. upon receiving a stop condition, the eeprom stops receiving write data and enters internally-timed write cycle. page write operation device address 1st memory address (n) 2nd memory address (n) write data (n+m) write data (n) 10100 w a12 a11 a14 a15 a13 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d7 d6 d5 d4 d3 d2 d1 d0 d5 d4 d3 d2 d1 d0 stop start note: 1. don't care bit. ack ack ack ack ack r/w * 1
HN58X24512I 14 acknowledge polling: acknowledge polling feature is used to show if the eeprom is in a internally-timed write cycle or not. this features is initiated by the stop condition after inputting write data. this requires the 8-bit device address word following the start condition during a internally-timed write cycle. acknowledge polling will operate r/w code = ?? acknowledgment ??(no acknowledgment) shows the eeprom is in a internally-timed write cycle and acknowledgment ??shows that the internally-timed write cycle has completed. see write cycle polling using ack. write cycle polling using ack send write command send stop condition to initiate write cycle send start condition send device address word with r/w = 0 send memory address send start condition send stop condition send stop condition proceed random address read operation proceed write operation next operation is addressing the memory ye s ye s no no ack returned
HN58X24512I 15 read operation there are three read operations: current address read, random read, and sequential read. read operations are initiated the same way as write operations with the exception of r/w = ?? current address read: the internal address counter maintains the last address accessed during the last read or write operation, with incremented by one. current address read accesses the address kept by the internal address counter. after receiving a start condition and the device address word (r/w is ??, the eeprom outputs the 8-bit current address data from the most significant bit following acknowledgment ??if the eeprom receives acknowledgment ??(no acknowledgment) and a following stop condition, the eeprom stops the read operation and is turned to a standby state. in case the eeprom have accessed the last address of the last page at previous read operation, the current address will roll over and returns to zero address. in case the eeprom have accessed the last address of the page at previous write operation, the current address will roll over within page addressing and returns to the first address in the same page. the current address is valid while power is on. the current address after power on will be indefinite. the random read operation described below is necessary to define the memory address. current address read operation device address read data (n+1) start note: 1. don't care bit. stop 101 0 0 r d7 d6 d5 d4 d3 d2 d1 d0 ack no ack r/w * 1
HN58X24512I 16 random read: this is a read operation with defined read address. a random read requires a dummy write to set read address. the eeprom receives a start condition, device address word (r/w=0) and memory address 2 8-bit sequentially. the eeprom outputs acknowledgment ??after receiving memory address then enters a current address read with receiving a start condition. the eeprom outputs the read data of the address which was defined in the dummy write operation. after receiving acknowledgment ??no acknowledgment) and a following stop condition, the eeprom stops the random read operation and returns to a standby state. random read operation @@ notes: 1. 2nd device address code (#) should be same as 1st (@). 2. don't care bit. device address device address 1st memory address (n) 2nd memory address (n) read data (n) 10100 ## 10100 r w a12 a11 a14 a15 a13 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d7 d6 d5 d4 d3 d2 d1 d0 stop start start ack ack no ack ack r/w ack r/w dummy write currect address read * 2 * 2
HN58X24512I 17 sequential read: sequential reads are initiated by either a current address read or a random read. if the eeprom receives acknowledgment ??after 8-bit read data, the read address is incremented and the next 8-bit read data are coming out. this operation can be continued as long as the eeprom receives acknowledgment ?? the address will roll over and returns address zero if it reaches the last address of the last page. the sequential read can be continued after roll over. the sequential read is terminated if the eeprom receives acknowledgment ??(no acknowledgment) and a following stop condition. sequential read operation device address read data (n+m) read data (n) read data (n+1) read data (n+2) 10100 r d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 d7 d6 d5 d4 d3 d2 d1 d0 stop start note: 1. don't care bit. ack ack no ack ack r/w ack * 1
HN58X24512I 18 notes data protection at v cc on/off when v cc is turned on or off, noise on the scl and sda inputs generated by external circuits (cpu, etc) may act as a trigger and turn the eeprom to unintentional program mode. to prevent this unintentional programming, this eeprom have a power on reset function. be careful of the notices described below in order for the power on reset function to operate correctly. scl and sda should be fixed to v cc or v ss during v cc on/off. low to high or high to low transition during v cc on/off may cause the trigger for the unintentional programming. v cc should be turned off after the eeprom is placed in a standby state. v cc turn on speed (tr) should be longer than 10 us (tr > 10 m s). write/erase endurance and data retention time the endurance is 10 5 cycles in case of page programming and 10 4 cycles in case of byte programming (1% cumulative failure rate). the data retention time is more than 10 years when a device is page-programmed less than 10 4 cycles. noise suppression time this eeprom have a noise suppression function at scl and sda inputs, that cut noise of width less than 50 ns. be careful not to allow noise of width more than 50 ns.
HN58X24512I 19 package dimensions hn58x24512fpi (tbd) hitachi code jedec eiaj mass (reference value) tbd unit: mm 0 ?10 1.27 8 5 14 5.3 0.1 1.9 0.1 0.1 0.1 6.05 8.2 0.3 0.6 0.2 1.45 typ 0.40 0.20 6.45 max
HN58X24512I 20 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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